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簡(jiǎn)要描述：Single layer h-BN （Boron Nitride） monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.
產(chǎn)品型號： 廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家更新時(shí)間：2024-06-03訪(fǎng) 問(wèn) 量：1145相關(guān)文章
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Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.
Properties of h-BN
Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.
Properties of h-BN
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