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簡(jiǎn)要描述：二硫化錫晶體 2H-SnS2（Tin Sulfide）晶體尺寸：~8毫米電學(xué)性能：半導體（~ 2.2ev）晶體結構：六邊形晶胞參數：a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°晶體類(lèi)型：合成晶體純度：＞99.995%
產(chǎn)品型號： 廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家更新時(shí)間：2024-06-03訪(fǎng) 問(wèn) 量：1159相關(guān)文章
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二硫化錫晶體 2H-SnS2(Tin Sulfide)
晶體尺寸：~8毫米
電學(xué)性能：半導體（~ 2.2ev）
晶體結構：六邊形
晶胞參數：a = b = 0.364, c = 0.589 nm, α = β = 90°, γ = 120°
晶體類(lèi)型：合成
晶體純度：＞99.995%
X-ray diffraction on a 2H phase Tin Disulfide single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4
Powder X-ray diffraction (XRD) of a single crystal 2H-SnS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal 2H-SnS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal 2H-SnS2. Measurement was performed with a 785 nm Raman system at room temperature.
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