13761090949
當前位置：首頁(yè) > 產(chǎn)品中心 > 二維材料 > 其他二維材料 > 2D SemiconductorGeP 磷化鍺晶體
簡(jiǎn)要描述：GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from （theoretically predicted） 1.68 eV of monolayer to 0.51 eV of bulk.
產(chǎn)品型號：2D Semiconductor 廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家更新時(shí)間：2024-06-04訪(fǎng) 問(wèn) 量：1394相關(guān)文章
Related Articles詳細介紹
GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk. GeP is an anisotropic semiconductor much similar to GaTe monoclinic structure. Our single crystal GeP (Germanium phosphide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.
Characteristics of vdW GeP crystals
產(chǎn)品咨詢(xún)
聯(lián)系我們
上海巨納科技有限公司 公司地址：上海市虹口區寶山路778號海倫國際大廈5樓 技術(shù)支持：化工儀器網(wǎng)掃一掃 更多精彩
微信二維碼
網(wǎng)站二維碼
微信掃一掃
歡迎來(lái)到