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14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals
Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.
Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.
14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals: Our large size （~1cm in size） vdW WS2 crystals are treated as gold standards
Hafnium disulfide （HfS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.
Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport （CVT）
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