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簡(jiǎn)要描述：硒化鍺晶體 GeSe （Germanium Selenide）晶體尺寸：~10毫米電學(xué)性能：半導體晶體結構：斜方晶系晶胞參數：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°晶體類(lèi)型：合成晶體純度：＞99.995%
產(chǎn)品型號： 廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家更新時(shí)間：2024-06-04訪(fǎng) 問(wèn) 量：1401相關(guān)文章
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硒化鍺晶體 GeSe (Germanium Selenide)
晶體尺寸：~10毫米
電學(xué)性能：半導體
晶體結構：斜方晶系
晶胞參數：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°
晶體類(lèi)型：合成
晶體純度：＞99.995%
X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.
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