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簡(jiǎn)要描述：硒化鎵晶體 2H-GaSe（Gallium Selenide）晶體尺寸：10毫米電學(xué)性能：半導體晶體結構：六邊形晶胞參數：a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°晶體類(lèi)型：合成晶體純度：＞99.995%
產(chǎn)品型號： 廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家更新時(shí)間：2024-06-04訪(fǎng) 問(wèn) 量：1399相關(guān)文章
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硒化鎵晶體 2H-GaSe(Gallium Selenide)
晶體尺寸：10毫米
電學(xué)性能：半導體
晶體結構：六邊形
晶胞參數：a = b = 0.374 nm, c = 1.592 nm, α = β = 90°, γ =120°
晶體類(lèi)型：合成
晶體純度：＞99.995%
X-ray diffraction on a GaSe single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (001) with h = 4, 6, 8, 10, 12
Powder X-ray diffraction (XRD) of a single crystal GaSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal GaSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GaSe. Measurement was performed with a 785 nm Raman system at room temperature.
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